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Samsung M378B5273DH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Samsung M378B5273DH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Overall score
star star star star star
Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Differences Specifications Comments

Differences

Samsung M378B5273DH0-CH9 4GB Reasons to consider
Samsung M378B5273DH0-CH9 4GB
Report a bug
  • Faster reading speed, GB/s
    13.3 left arrow 12.8
    Average value in the tests
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 41
    Around -58% lower latency

Specifications

Complete list of technical specifications
Samsung M378B5273DH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    41 left arrow 26
  • Read speed, GB/s
    13.3 left arrow 12.8
  • Write speed, GB/s
    8.3 left arrow 8.3
  • Memory bandwidth, mbps
    10600 left arrow 10600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    2176 left arrow 2186

Samsung M378B5273DH0-CH9 4GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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