RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gold Key Technology Co Ltd NMUD480E82-3000D 8GB
Comparar
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Gold Key Technology Co Ltd NMUD480E82-3000D 8GB
Pontuação geral
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Pontuação geral
Gold Key Technology Co Ltd NMUD480E82-3000D 8GB
Diferenças
Especificações
Comentários
Diferenças
Razões a considerar
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Relatar um erro
Abaixo da latência nos testes do PassMark, ns
24
33
Por volta de 27% menor latência
Razões a considerar
Gold Key Technology Co Ltd NMUD480E82-3000D 8GB
Relatar um erro
Velocidade de leitura mais rápida, GB/s
20.1
16
Valor médio nos testes
Velocidade de escrita mais rápida, GB/s
13.7
12.5
Valor médio nos testes
Especificações
Lista completa de especificações técnicas
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gold Key Technology Co Ltd NMUD480E82-3000D 8GB
Características principais
Tipo de memória
DDR4
DDR4
Latência em PassMark, ns
24
33
Velocidade de leitura, GB/s
16.0
20.1
Velocidade de escrita, GB/s
12.5
13.7
Largura de banda de memória, mbps
19200
19200
Other
Descrição
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Tempos / Velocidade do relógio
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (Quanto mais, melhor)
2925
3260
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB Comparações de RAM
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Gold Key Technology Co Ltd NMUD480E82-3000D 8GB Comparações de RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Últimas comparações
Ramaxel Technology RMR5030ME68F9F1600 4GB
Crucial Technology CT8G4DFS8213.C8FDR1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Gold Key Technology Co Ltd NMUD480E82-3000D 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMR16GX4M2C3000C15 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Ramaxel Technology RMUA5200MR78HAF-3200 8GB
Kingston 99U5595-005.A00LF 2GB
Kingston 9905625-096.A00G 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS8G4D240FSB.16FARG 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology CT16G4DFRA32A.C16FN 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMU16GX4M2A2400C16 8GB
SK Hynix HMT325S6CFR8C-PB 2GB
G Skill Intl F4-3200C16-8GTZKO 8GB
Samsung M393B1K70CH0-CH9 8GB
DSL Memory D4SH1G081SH26A-C 8GB
Nanya Technology NT1GT64U88D0BY-AD 1GB
G Skill Intl F4-3200C16-16GVR 16GB
‹
›
Relatar um erro
×
Bug description
Source link