Samsung M3 93T5750CZA-CE6 2GB vs Corsair CM4X4GF2400C16N2 4GB

Pontuação geral

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Pontuação geral

Corsair CM4X4GF2400C16N2 4GB

Corsair CM4X4GF2400C16N2 4GB

Diferenças Especificações Comentários

Diferenças

Samsung M3 93T5750CZA-CE6 2GB

Razões a considerar
Samsung M3 93T5750CZA-CE6 2GB

Relatar um erro

Velocidade de leitura mais rápida, GB/s

3 13.5

Valor médio nos testes

Corsair CM4X4GF2400C16N2 4GB

Razões a considerar
Corsair CM4X4GF2400C16N2 4GB

Relatar um erro

Abaixo da latência nos testes do PassMark, ns

76 77

Por volta de -1% menor latência
Velocidade de escrita mais rápida, GB/s

7.3 2,622.0

Valor médio nos testes
Maior largura de banda de memória, mbps

19200 5300

Por volta de 3.62 maior largura de banda

Especificações

Lista completa de especificações técnicas

Samsung M3 93T5750CZA-CE6 2GB

Corsair CM4X4GF2400C16N2 4GB

Características principais

Tipo de memória

DDR2 DDR4
Latência em PassMark, ns

77 76
Velocidade de leitura, GB/s

3,405.2 13.5
Velocidade de escrita, GB/s

2,622.0 7.3
Largura de banda de memória, mbps

5300 19200

Other

Descrição

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Tempos / Velocidade do relógio

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (Quanto mais, melhor)

763 1587

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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