SK Hynix HMT351U6AFR8C-H9 4GB vs Samsung M378B5273BH1-CH9 4GB

Pontuação geral

SK Hynix HMT351U6AFR8C-H9 4GB

SK Hynix HMT351U6AFR8C-H9 4GB

Pontuação geral

Samsung M378B5273BH1-CH9 4GB

Samsung M378B5273BH1-CH9 4GB

Diferenças Especificações Comentários

Diferenças

SK Hynix HMT351U6AFR8C-H9 4GB

Razões a considerar
SK Hynix HMT351U6AFR8C-H9 4GB

Relatar um erro

Velocidade de leitura mais rápida, GB/s

14.4 12.3

Valor médio nos testes

Samsung M378B5273BH1-CH9 4GB

Razões a considerar
Samsung M378B5273BH1-CH9 4GB

Relatar um erro

Velocidade de escrita mais rápida, GB/s

8.3 7.8

Valor médio nos testes

Especificações

Lista completa de especificações técnicas

SK Hynix HMT351U6AFR8C-H9 4GB

Samsung M378B5273BH1-CH9 4GB

Características principais

Tipo de memória

DDR3 DDR3
Latência em PassMark, ns

25 25
Velocidade de leitura, GB/s

14.4 12.3
Velocidade de escrita, GB/s

7.8 8.3
Largura de banda de memória, mbps

10600 10600

Other

Descrição

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
Tempos / Velocidade do relógio

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
Ranking PassMark (Quanto mais, melhor)

2181 2140

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

Últimas comparações

SK Hynix HMT351U6AFR8C-H9 4GB

SK Hynix HMT351U6AFR8C-H9 4GB

Samsung M378B5273BH1-CH9 4GB

Samsung M378B5273BH1-CH9 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

Crucial Technology CT4G4DFS8266.M8FF 4GB

Crucial Technology CT4G4DFS8266.M8FF 4GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M378A5244CB0-CVF 4GB

Samsung M378A5244CB0-CVF 4GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kingston 9905670-012.A00G 8GB

Kingston 9905670-012.A00G 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kingston 9965600-011.A01G 16GB

Kingston 9965600-011.A01G 16GB

Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

G Skill Intl F4-2133C15-16GVR 16GB

G Skill Intl F4-2133C15-16GVR 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

V-GEN D4H8GL26A8TS6 8GB

V-GEN D4H8GL26A8TS6 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

G Skill Intl F4-3400C16-8GTZSW 8GB

G Skill Intl F4-3400C16-8GTZSW 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

G Skill Intl F4-3466C16-16GTZ 16GB

G Skill Intl F4-3466C16-16GTZ 16GB

A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Panram International Corporation W4U2133PS-8G 8GB

Panram International Corporation W4U2133PS-8G 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

Kingston KHX3466C19D4/8G 8GB

Kingston KHX3466C19D4/8G 8GB