RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
SK Hynix HMT351U6AFR8C-H9 4GB
Samsung M378B5273BH1-CH9 4GB

SK Hynix HMT351U6AFR8C-H9 4GB vs Samsung M378B5273BH1-CH9 4GB

总分
star star star star star
SK Hynix HMT351U6AFR8C-H9 4GB

SK Hynix HMT351U6AFR8C-H9 4GB

总分
star star star star star
Samsung M378B5273BH1-CH9 4GB

Samsung M378B5273BH1-CH9 4GB

差异 规格 评论

差异

SK Hynix HMT351U6AFR8C-H9 4GB 需要考虑的原因
SK Hynix HMT351U6AFR8C-H9 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.4 left arrow 12.3
    测试中的平均数值
Samsung M378B5273BH1-CH9 4GB 需要考虑的原因
Samsung M378B5273BH1-CH9 4GB
报告一个错误
  • 更快的写入速度，GB/s
    8.3 left arrow 7.8
    测试中的平均数值

规格

完整的技术规格清单
SK Hynix HMT351U6AFR8C-H9 4GB
Samsung M378B5273BH1-CH9 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    25 left arrow 25
  • 读取速度，GB/s
    14.4 left arrow 12.3
  • 写入速度，GB/s
    7.8 left arrow 8.3
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2181 left arrow 2140

SK Hynix HMT351U6AFR8C-H9 4GB RAM的比较

SK Hynix HMT351U6CFR8C-H9 4GB
Samsung M471A1A43CB1-CRC 8GB

Samsung M378B5273BH1-CH9 4GB RAM的比较

Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Ramaxel Technology RMUA5090KB78HAF2133 8GB
Ramaxel Technology RMUA5090KB78HAF2133 8GB
内存RAM
Samsung M471B5674QH0-YK0 2GB
Samsung M471B5674QH0-YK0 2GB
Corsair CMK16GX4M4A2400C14 4GB
Corsair CMK16GX4M4A2400C14 4GB
内存RAM
SK Hynix HMT351U6AFR8C-H9 4GB
SK Hynix HMT351U6AFR8C-H9 4GB
Samsung M378B5273BH1-CH9 4GB
Samsung M378B5273BH1-CH9 4GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston 9905622-025.A01G 4GB
Kingston 9905622-025.A01G 4GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMW32GX4M4D3600C18 8GB
Corsair CMW32GX4M4D3600C18 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-3000C15-4GRK 4GB
G Skill Intl F4-3000C15-4GRK 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C15-8GTZSW 8GB
G Skill Intl F4-3200C15-8GTZSW 8GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
takeMS International AG TMS4GB364E081139EM 4GB
takeMS International AG TMS4GB364E081139EM 4GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Kingston SMD4-S8G48HJ-26V 8GB
Kingston SMD4-S8G48HJ-26V 8GB
内存RAM
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Kingston 9905712-001.B00G 16GB
Kingston 9905712-001.B00G 16GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Team Group Inc. TEAMGROUP-UD4-3000 8GB
Team Group Inc. TEAMGROUP-UD4-3000 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Crucial Technology BLS16G4D26BFST.16FD 16GB
Crucial Technology BLS16G4D26BFST.16FD 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3400C16-8GSXW 8GB
G Skill Intl F4-3400C16-8GSXW 8GB
内存RAM
Kingston 99U5458-002.A00LF 2GB
Kingston 99U5458-002.A00LF 2GB
Kingston KHX2400C12D4/16GX 16GB
Kingston KHX2400C12D4/16GX 16GB
内存RAM