A-DATA Technology AD73I1C1674EV 4GB vs Kingston HP26D4S9S8MD-8 8GB

总分

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分

Kingston HP26D4S9S8MD-8 8GB

Kingston HP26D4S9S8MD-8 8GB

差异规格评论

差异

A-DATA Technology AD73I1C1674EV 4GB

需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB

报告一个错误

Kingston HP26D4S9S8MD-8 8GB

需要考虑的原因
Kingston HP26D4S9S8MD-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 40

左右 -14% 更低的延时
更快的读取速度，GB/s

14.4 11.3

测试中的平均数值
更快的写入速度，GB/s

9.9 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1C1674EV 4GB

Kingston HP26D4S9S8MD-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 35
读取速度，GB/s

11.3 14.4
写入速度，GB/s

7.5 9.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1654 2452

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology DDR4 2400 16GB

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Corsair CMR16GX4M2Z3200C16 8GB

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Kingston 9905471-006.A01LF 4GB

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G Skill Intl F4-3000C16-8GTRG 8GB

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Kingston 9905624-014.A00G 4GB

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Kingston 99U5474-010.A00LF 2GB

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Kingston 99U5471-012.A00LF 4GB

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Kingston 99U5471-020.A00LF 4GB

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PNY Electronics PNY 2GB

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Samsung M471B5273DH0-CH9 4GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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SanMax Technologies Inc. SMD-8G28HP-21P 8GB

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A-DATA Technology AX5U5200C3816G-B 16GB

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A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-3200C14-8GTZKW 8GB

G Skill Intl F4-3200C14-8GTZKW 8GB

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

Corsair CMK16GX4M2Z3466C16 8GB

Corsair CMK16GX4M2Z3466C16 8GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Apacer Technology 78.CAGP7.DFW0C 8GB

Apacer Technology 78.CAGP7.DFW0C 8GB