A-DATA Technology ADOVE1A0834E 1GB vs G Skill Intl F4-3000C15-8GTZ 8GB

总分

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分

G Skill Intl F4-3000C15-8GTZ 8GB

G Skill Intl F4-3000C15-8GTZ 8GB

差异规格评论

差异

A-DATA Technology ADOVE1A0834E 1GB

需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB

报告一个错误

G Skill Intl F4-3000C15-8GTZ 8GB

需要考虑的原因
G Skill Intl F4-3000C15-8GTZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 94

左右 -224% 更低的延时
更快的读取速度，GB/s

18.5 1

测试中的平均数值
更快的写入速度，GB/s

14.6 1,165.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology ADOVE1A0834E 1GB

G Skill Intl F4-3000C15-8GTZ 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

94 29
读取速度，GB/s

1,882.0 18.5
写入速度，GB/s

1,165.4 14.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

305 3313

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM4X16GE2666C16K8 16GB

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Samsung 1600 CL10 Series 8GB

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Corsair CMSO32GX4M2A2133C15 16GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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Kingston KHX2400C14S4/8G 8GB

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A-DATA Technology ADOVE1A0834E 1GB

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G Skill Intl F4-3000C15-8GTZ 8GB

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Avant Technology F641GU67F9333G 8GB

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G Skill Intl F4-3733C17-4GVK 4GB

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Kingston 9905403-444.A00LF 4GB

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Kingston CBD32D4S2D8HD-16 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Avant Technology J642GU42J7240NF 16GB

Avant Technology J642GU42J7240NF 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

G Skill Intl F4-3600C14-8GTRGB 8GB

G Skill Intl F4-3600C14-8GTRGB 8GB

Samsung M378B5773DH0-CH9 2GB

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Smart Modular SF464128CKHIWDFSEG 4GB

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