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A-DATA Technology ADOVE1A0834E 1GB
Kingston ACR32D4U2S8ME-16 16GB

A-DATA Technology ADOVE1A0834E 1GB vs Kingston ACR32D4U2S8ME-16 16GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Kingston ACR32D4U2S8ME-16 16GB

Kingston ACR32D4U2S8ME-16 16GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
Kingston ACR32D4U2S8ME-16 16GB 需要考虑的原因
Kingston ACR32D4U2S8ME-16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 94
    左右 -176% 更低的延时
  • 更快的读取速度，GB/s
    17.2 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.1 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Kingston ACR32D4U2S8ME-16 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 34
  • 读取速度，GB/s
    1,882.0 left arrow 17.2
  • 写入速度，GB/s
    1,165.4 left arrow 12.1
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    305 left arrow 3119

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Kingston ACR32D4U2S8ME-16 16GB RAM的比较

Patriot Memory (PDP Systems) PSD34G16002 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
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Kingston 9965596-036.B00G 8GB
内存RAM
Crucial Technology CT16G4SFRA32A.M16FR 16GB
Crucial Technology CT16G4SFRA32A.M16FR 16GB
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Crucial Technology CT16G4SFRA32A.C8FE 16GB
内存RAM
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Kingston 2GB-DDR2 800Mhz 2GB
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Patriot Memory (PDP Systems) 2133 C14 Series 8GB
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M471A5644EB0-CPB 2GB
Samsung M471A5644EB0-CPB 2GB
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G Skill Intl F2-5300CL4-1GBSA 1GB
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Kingston 9905744-023.A00G 16GB
内存RAM
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Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
DSL Memory D4SS12082SH21A-A 8GB
DSL Memory D4SS12082SH21A-A 8GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
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Teikon TMA81GU6AFR8N-UHSC 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
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内存RAM
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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
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Heoriady M378A1K43BB2-CTD 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
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Mushkin MR[ABC]4U360JNNM8G 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
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Golden Empire CL15-17-17 D4-2666 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
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Corsair CMW16GX4M2Z4000C18 8GB
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