A-DATA Technology ADOVE1A0834E 1GB vs Kingston ACR32D4U2S8ME-16 16GB

总分

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分

Kingston ACR32D4U2S8ME-16 16GB

Kingston ACR32D4U2S8ME-16 16GB

差异规格评论

差异

A-DATA Technology ADOVE1A0834E 1GB

需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB

报告一个错误

Kingston ACR32D4U2S8ME-16 16GB

需要考虑的原因
Kingston ACR32D4U2S8ME-16 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 94

左右 -176% 更低的延时
更快的读取速度，GB/s

17.2 1

测试中的平均数值
更快的写入速度，GB/s

12.1 1,165.4

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

A-DATA Technology ADOVE1A0834E 1GB

Kingston ACR32D4U2S8ME-16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

94 34
读取速度，GB/s

1,882.0 17.2
写入速度，GB/s

1,165.4 12.1
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

305 3119

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D240FSE.16FAR 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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SK Hynix HMA81GS6CJR8N-UH 8GB

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AMD R534G1601U1S-UO 4GB

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Samsung M391A1K43BB1-CRC 8GB

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Ramaxel Technology RMT3160ED58E9W1600 4GB

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A-DATA Technology AO1P24HC4N2-BWCS 4GB

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Patriot Memory (PDP Systems) 3600 C14 Series 8GB

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AMD AE34G1601U1 4GB

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Micron Technology 16ATF2G64AZ-2G3B1 16GB

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Panram International Corporation D4N2400PS-8G 8GB

Panram International Corporation D4N2400PS-8G 8GB

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Kingston KHX2133C14S4/16G 16GB

Kingston KHX2133C14S4/16G 16GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C

Crucial Technology CT16G4SFD832A.M16FJ 16GB

Crucial Technology CT16G4SFD832A.M16FJ 16GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

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Kingston 9905703-008.A00G 16GB