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A-DATA Technology ADOVE1A0834E 1GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB

A-DATA Technology ADOVE1A0834E 1GB vs Micron Technology 18ASF1G72PZ-2G1A2 8GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Micron Technology 18ASF1G72PZ-2G1A2 8GB

Micron Technology 18ASF1G72PZ-2G1A2 8GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
Micron Technology 18ASF1G72PZ-2G1A2 8GB 需要考虑的原因
Micron Technology 18ASF1G72PZ-2G1A2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    49 left arrow 94
    左右 -92% 更低的延时
  • 更快的读取速度，GB/s
    10.5 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.3 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 49
  • 读取速度，GB/s
    1,882.0 left arrow 10.5
  • 写入速度，GB/s
    1,165.4 left arrow 8.3
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    305 left arrow 2374

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Micron Technology 18ASF1G72PZ-2G1A2 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
内存RAM
Corsair CMK64GX5M2B5200C40 32GB
Corsair CMK64GX5M2B5200C40 32GB
Kingston 16ATF2G64AZ-2G1B1 8GB
Kingston 16ATF2G64AZ-2G1B1 8GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
Micron Technology 16ATF2G64AZ-2G6H1 16GB
Micron Technology 16ATF2G64AZ-2G6H1 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Panram International Corporation PUD43000C168G2NJR 8GB
Panram International Corporation PUD43000C168G2NJR 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Panram International Corporation PUD42400C154G2NJW 4GB
Panram International Corporation PUD42400C154G2NJW 4GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Kingston X5H5PW-MIE 8GB
Kingston X5H5PW-MIE 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Mushkin MR[ABC]4U320GJJM8G 8GB
Mushkin MR[ABC]4U320GJJM8G 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905625-139.A00G 16GB
Kingston 9905625-139.A00G 16GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
G Skill Intl F4-4133C19-8GTZR 8GB
G Skill Intl F4-4133C19-8GTZR 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
G Skill Intl F4-3466C16-8GVR 8GB
G Skill Intl F4-3466C16-8GVR 8GB
内存RAM
Corsair CMW16GX4M2C3200C16 8GB
Corsair CMW16GX4M2C3200C16 8GB
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston 9905744-062.A00G 32GB
Kingston 9905744-062.A00G 32GB
内存RAM