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Samsung M378A2K43DB1-CTD 16GB
Samsung M378A2K43CB1-CTD 16GB
比较
Samsung M378A2K43DB1-CTD 16GB vs Samsung M378A2K43CB1-CTD 16GB
总分
Samsung M378A2K43DB1-CTD 16GB
总分
Samsung M378A2K43CB1-CTD 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378A2K43DB1-CTD 16GB
报告一个错误
需要考虑的原因
Samsung M378A2K43CB1-CTD 16GB
报告一个错误
低于PassMark测试中的延时,ns
33
36
左右 -9% 更低的延时
更快的读取速度,GB/s
16.2
15.3
测试中的平均数值
更快的写入速度,GB/s
12.0
11.9
测试中的平均数值
规格
完整的技术规格清单
Samsung M378A2K43DB1-CTD 16GB
Samsung M378A2K43CB1-CTD 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
36
33
读取速度,GB/s
15.3
16.2
写入速度,GB/s
11.9
12.0
内存带宽,mbps
21300
21300
Other
描述
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2981
3116
Samsung M378A2K43DB1-CTD 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M378A2K43CB1-CTD 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378A2K43DB1-CTD 16GB
Samsung M378A2K43CB1-CTD 16GB
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Kingston 99U5474-028.A00LF 4GB
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Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-3466C16-8GVK 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
Samsung M3 93T5750CZA-CE6 2GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Kingston 9905403-444.A00LF 4GB
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386A4G40DM0-CPB 32GB
报告一个错误
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Bug description
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