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Samsung M471A1G44AB0-CWE 8GB
G Skill Intl F4-4000C19-16GTRG 16GB

Samsung M471A1G44AB0-CWE 8GB vs G Skill Intl F4-4000C19-16GTRG 16GB

总分
star star star star star
Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

总分
star star star star star
G Skill Intl F4-4000C19-16GTRG 16GB

G Skill Intl F4-4000C19-16GTRG 16GB

差异 规格 评论

差异

Samsung M471A1G44AB0-CWE 8GB 需要考虑的原因
Samsung M471A1G44AB0-CWE 8GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
G Skill Intl F4-4000C19-16GTRG 16GB 需要考虑的原因
G Skill Intl F4-4000C19-16GTRG 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 50
    左右 -108% 更低的延时
  • 更快的读取速度，GB/s
    19.4 left arrow 15.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    18.9 left arrow 10.9
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A1G44AB0-CWE 8GB
G Skill Intl F4-4000C19-16GTRG 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 24
  • 读取速度，GB/s
    15.3 left arrow 19.4
  • 写入速度，GB/s
    10.9 left arrow 18.9
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2512 left arrow 4219

Samsung M471A1G44AB0-CWE 8GB RAM的比较

Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-4000C19-16GTRG 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CM4X16GE2666C16K8 16GB
Corsair CM4X16GE2666C16K8 16GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Apacer Technology 78.B1GQB.4010B 4GB
Apacer Technology 78.B1GQB.4010B 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Kingston ACR24D4S7S8MB-8 8GB
Kingston ACR24D4S7S8MB-8 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMK16GX4M4A2800C16 4GB
Corsair CMK16GX4M4A2800C16 4GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M474A4G43MB1-CTD 32GB
Samsung M474A4G43MB1-CTD 32GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Corsair CMW16GX4M2Z2933C16 8GB
Corsair CMW16GX4M2Z2933C16 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Essencore Limited KD4AGS88C-26N1900 16GB
Essencore Limited KD4AGS88C-26N1900 16GB
内存RAM
Corsair CMD8GX3M2A2133C9 4GB
Corsair CMD8GX3M2A2133C9 4GB
Corsair CMZ8GX3M2X1600C7 4GB
Corsair CMZ8GX3M2X1600C7 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA851U6AFR6N-UH 4GB
SK Hynix HMA851U6AFR6N-UH 4GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
内存RAM
Corsair CMK32GX5M2B5600C36 16GB
Corsair CMK32GX5M2B5600C36 16GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK32GX4M1A2666C16 32GB
Corsair CMK32GX4M1A2666C16 32GB
内存RAM
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston MSI21D4S15HAG/8G 8GB
Kingston MSI21D4S15HAG/8G 8GB
内存RAM