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Samsung M471B5273CH0-CH9 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Samsung M471B5273CH0-CH9 4GB vs Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

总分
star star star star star
Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分
star star star star star
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

差异 规格 评论

差异

Samsung M471B5273CH0-CH9 4GB 需要考虑的原因
Samsung M471B5273CH0-CH9 4GB
报告一个错误
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB 需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 48
    左右 -109% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 8.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273CH0-CH9 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    48 left arrow 23
  • 读取速度，GB/s
    8.9 left arrow 16.7
  • 写入速度，GB/s
    5.9 left arrow 13.2
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1420 left arrow 3025

Samsung M471B5273CH0-CH9 4GB RAM的比较

G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB RAM的比较

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology M471A5143EB1-CRC 4GB
Nanya Technology M471A5143EB1-CRC 4GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
内存RAM
Corsair CM5S16GM4800A40K2 16GB
Corsair CM5S16GM4800A40K2 16GB
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Mushkin MR[ABC]4U266GHHF8G 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3600C14-8GVKA 8GB
G Skill Intl F4-3600C14-8GVKA 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
内存RAM
Crucial Technology CT102464BD160B.M16 8GB
Crucial Technology CT102464BD160B.M16 8GB
Kingston ACR26D4U9S8MH-8 8GB
Kingston ACR26D4U9S8MH-8 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT16G4SFD824A.C16FJ 16GB
Crucial Technology CT16G4SFD824A.C16FJ 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston 9905734-061.A00G 32GB
Kingston 9905734-061.A00G 32GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Kingston 9965643-006.A01G 8GB
Kingston 9965643-006.A01G 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Kllisre HMA81GU6AFR8N-VK 8GB
Kllisre HMA81GU6AFR8N-VK 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMU32GX4M4C3466C16 8GB
Corsair CMU32GX4M4C3466C16 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
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Corsair CMD32GX4M4C3466C16W 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMR32GX4M4D3000C16 8GB
Corsair CMR32GX4M4D3000C16 8GB
内存RAM