A-DATA Technology ADOVE1A0834E 1GB vs Samsung 18ASF1G72PDZ-2G1B1 16GB

总分

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分

Samsung 18ASF1G72PDZ-2G1B1 16GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

差异规格评论

差异

A-DATA Technology ADOVE1A0834E 1GB

需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB

报告一个错误

Samsung 18ASF1G72PDZ-2G1B1 16GB

需要考虑的原因
Samsung 18ASF1G72PDZ-2G1B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 94

左右 -194% 更低的延时
更快的读取速度，GB/s

9.8 1

测试中的平均数值
更快的写入速度，GB/s

8.6 1,165.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology ADOVE1A0834E 1GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

94 32
读取速度，GB/s

1,882.0 9.8
写入速度，GB/s

1,165.4 8.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

305 2271

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D26BFSE.16FBD2 8GB

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Samsung M378A1G44AB0-CWE 8GB