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A-DATA Technology ADOVE1A0834E 1GB
Samsung M378A5244CB0-CVF 4GB

A-DATA Technology ADOVE1A0834E 1GB vs Samsung M378A5244CB0-CVF 4GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Samsung M378A5244CB0-CVF 4GB

Samsung M378A5244CB0-CVF 4GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
Samsung M378A5244CB0-CVF 4GB 需要考虑的原因
Samsung M378A5244CB0-CVF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 94
    左右 -213% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    23400 left arrow 6400
    左右 3.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Samsung M378A5244CB0-CVF 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 30
  • 读取速度，GB/s
    1,882.0 left arrow 16.0
  • 写入速度，GB/s
    1,165.4 left arrow 12.3
  • 内存带宽，mbps
    6400 left arrow 23400
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • 排名PassMark (越多越好)
    305 left arrow 2709

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Samsung M378A5244CB0-CVF 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Terabyte Co Ltd RCX2-16G3600A 8GB
Terabyte Co Ltd RCX2-16G3600A 8GB
内存RAM
SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
G Skill Intl F4-3600C18-8GTZR 8GB
G Skill Intl F4-3600C18-8GTZR 8GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
Corsair CM4X16GC3000C15D4 16GB
Corsair CM4X16GC3000C15D4 16GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Samsung M378A5244CB0-CVF 4GB
Samsung M378A5244CB0-CVF 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
Crucial Technology BLS8G4D240FSA.16FARG 8GB
Crucial Technology BLS8G4D240FSA.16FARG 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMU32GX4M4C3000C15 8GB
Corsair CMU32GX4M4C3000C15 8GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Corsair CMD32GX4M4A2666C16 8GB
Corsair CMD32GX4M4A2666C16 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Kingston 9905678-023.A00G 8GB
Kingston 9905678-023.A00G 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Corsair CMH32GX4M2Z3200C16 16GB
Corsair CMH32GX4M2Z3200C16 16GB
内存RAM