A-DATA Technology ADOVE1A0834E 1GB vs Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

总分

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

差异规格评论

差异

A-DATA Technology ADOVE1A0834E 1GB

需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB

报告一个错误

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

需要考虑的原因
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

报告一个错误

低于PassMark测试中的延时，ns

72 94

左右 -31% 更低的延时
更快的读取速度，GB/s

15.3 1

测试中的平均数值
更快的写入速度，GB/s

8.0 1,165.4

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology ADOVE1A0834E 1GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

94 72
读取速度，GB/s

1,882.0 15.3
写入速度，GB/s

1,165.4 8.0
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

305 1593

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Kingston 99U5403-465.A00LF 8GB

Kingston 99U5403-465.A00LF 8GB

Crucial Technology BLS8G4D240FSB.M16FBD 8GB

Crucial Technology BLS8G4D240FSB.M16FBD 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Kingston 9905598-009.A00G 8GB

Kingston 9905598-009.A00G 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Apacer Technology 78.CAGP7.C7C0B 8GB

Apacer Technology 78.CAGP7.C7C0B 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

G Skill Intl F4-2800C14-16GVK 16GB

G Skill Intl F4-2800C14-16GVK 16GB

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

G Skill Intl F4-3600C16-8GTRG 8GB

G Skill Intl F4-3600C16-8GTRG 8GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

Crucial Technology BLS4G4D26BFSE.8FBD2 4GB

Crucial Technology BLS4G4D26BFSE.8FBD2 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Kingston 9905700-053.A00G 8GB

Kingston 9905700-053.A00G 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Crucial Technology CT8G4DFS832A.M8FJ 8GB

Crucial Technology CT8G4DFS832A.M8FJ 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Crucial Technology CT4G4SFS624A.C4FB 4GB

Crucial Technology CT4G4SFS624A.C4FB 4GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-3200C14-8GTRG 8GB

G Skill Intl F4-3200C14-8GTRG 8GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Patriot Memory (PDP Systems) PSD416G24002 16GB

Patriot Memory (PDP Systems) PSD416G24002 16GB