Nanya Technology M2F8G64CB8HC9N-DI 8GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 73

左右 49% 更低的延时

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

需要考虑的原因
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

报告一个错误

更快的读取速度，GB/s

15.2 13.9

测试中的平均数值
更快的写入速度，GB/s

9.1 8.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 73
读取速度，GB/s

13.9 15.2
写入速度，GB/s

8.6 9.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2395 1843

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

Crucial Technology BLM8G44C19U4BL.M8FE1 8GB

Crucial Technology BLM8G44C19U4BL.M8FE1 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

G Skill Intl F4-3200C14-32GTRS 32GB

G Skill Intl F4-3200C14-32GTRS 32GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-2800C15-8GTZB 8GB

G Skill Intl F4-2800C15-8GTZB 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston HP37D4U1S8ME-16XR 16GB

Kingston HP37D4U1S8ME-16XR 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

ISD Technology Limited IM48GU48N21-FFFHM 8GB

ISD Technology Limited IM48GU48N21-FFFHM 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB

V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905670-012.A00G 8GB

Kingston 9905670-012.A00G 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Corsair CMK64GX4M4B3200C16 16GB

Corsair CMK64GX4M4B3200C16 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Samsung M474A1G43DB0-CPB 8GB

Samsung M474A1G43DB0-CPB 8GB