A-DATA Technology AM1U16BC4P2-B19B 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB

A-DATA Technology AM1U16BC4P2-B19B 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB

总分

A-DATA Technology AM1U16BC4P2-B19B 4GB

A-DATA Technology AM1U16BC4P2-B19B 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB

差异规格评论

差异

A-DATA Technology AM1U16BC4P2-B19B 4GB

需要考虑的原因
A-DATA Technology AM1U16BC4P2-B19B 4GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 84

左右 -200% 更低的延时
更快的读取速度，GB/s

10.7 2.3

测试中的平均数值
更快的写入速度，GB/s

6.1 2.4

测试中的平均数值

规格

完整的技术规格清单

A-DATA Technology AM1U16BC4P2-B19B 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

84 28
读取速度，GB/s

2.3 10.7
写入速度，GB/s

2.4 6.1
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

469 1720

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology AM1U16BC4P2-B19B 4GB

A-DATA Technology AM1U16BC4P2-B19B 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C

Kingston KF2933C17S4/16G 16GB

Kingston KF2933C17S4/16G 16GB

King Tiger Technology Tigo-2400MHz-4G 4GB

King Tiger Technology Tigo-2400MHz-4G 4GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

G Skill Intl F4-4000C17-16GTZRB 16GB

G Skill Intl F4-4000C17-16GTZRB 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Kingston 9905643-009.A00G 8GB

Kingston 9905643-009.A00G 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB

SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Apacer Technology GD2.1527WT.001 8GB

Apacer Technology GD2.1527WT.001 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

G Skill Intl F4-3300C16-16GTZKW 16GB

G Skill Intl F4-3300C16-16GTZKW 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT8G4DFS8213.C8FDD1 8GB

Crucial Technology CT8G4DFS8213.C8FDD1 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston MSI26D4S9S8ME-8 8GB

Kingston MSI26D4S9S8ME-8 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 8ATF1G64HZ-2G2G1 8GB

Micron Technology 8ATF1G64HZ-2G2G1 8GB

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N