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A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3300C16-16GTZKW 16GB
比较
A-DATA Technology AM2L16BC4R1-B0AS 4GB vs G Skill Intl F4-3300C16-16GTZKW 16GB
总分
A-DATA Technology AM2L16BC4R1-B0AS 4GB
总分
G Skill Intl F4-3300C16-16GTZKW 16GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0AS 4GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3300C16-16GTZKW 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
27
左右 -13% 更低的延时
更快的读取速度,GB/s
16.1
13.4
测试中的平均数值
更快的写入速度,GB/s
11.9
7.8
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3300C16-16GTZKW 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
24
读取速度,GB/s
13.4
16.1
写入速度,GB/s
7.8
11.9
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2181
3305
A-DATA Technology AM2L16BC4R1-B0AS 4GB RAM的比较
Kingston 99U5403-185.A00LF 8GB
Kingston 9905403-410.A00LF 4GB
G Skill Intl F4-3300C16-16GTZKW 16GB RAM的比较
Kingston 9905403-156.A00LF 2GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5273CH0-CH9 4GB
Apacer Technology 78.C1GM3.C7Z0B 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3300C16-16GTZKW 16GB
Strontium EVMT8G1600U86S 8GB
Avant Technology J641GU42J9266ND 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3000C14-16GTZ 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Corsair CMD16GX4M4A2800C16 4GB
Samsung M391B5273CH0-CH9 4GB
G Skill Intl F4-4000C17-8GTZR 8GB
Kingston 99U5428-063.A00LF 8GB
Panram International Corporation PUD43000C168G2NJR 8GB
Kingston KHX1600C9D3/8G 8GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
Samsung 1600 CL10 Series 8GB
Golden Empire CL16-16-16 D4-2800 8GB
Samsung M471B1G73QH0-YK0 8GB
HT Micron HTH5AN8G8NCJR-VKD 8GB
A-DATA Technology AD73I1B1672EG 2GB
Kingston 9965662-010.A00G 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Samsung M393A1G40DB0-B`B 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3866C18-16GTZR 16GB
报告一个错误
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Bug description
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