RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3866C18-16GTZR 16GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3866C18-16GTZR 16GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
G Skill Intl F4-3866C18-16GTZR 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
34
左右 29% 更低的延时
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-3866C18-16GTZR 16GB
报告一个错误
更快的读取速度,GB/s
17.5
16
测试中的平均数值
更快的写入速度,GB/s
17.0
12.5
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3866C18-16GTZR 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
34
读取速度,GB/s
16.0
17.5
写入速度,GB/s
12.5
17.0
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
3697
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3866C18-16GTZR 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3866C18-16GTZR 16GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CM4B8G1J2400A16K2-O 8GB
Kingston 99U5403-036.A00G 4GB
Team Group Inc. TEAMGROUP-UD4-3000 8GB
Kingston 99U5403-036.A00G 4GB
Corsair CMW16GX4M2K4000C19 8GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-3300C16-8GTZSW 8GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3000C15-4GRBB 4GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Transcend Information TS1GSH64V4B 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-2800C15-4GTZB 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
G Skill Intl F5-6000U4040E16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Kingston 9965525-140.A00LF 8GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology BLS8G4D240FSB.16FARG 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
报告一个错误
×
Bug description
Source link