Crucial Technology BLT2G3D1608DT1TX0 2GB vs Samsung M393A1G40DB0-B`B 8GB

总分

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分

Samsung M393A1G40DB0-B`B 8GB

Samsung M393A1G40DB0-B`B 8GB

差异规格评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB

需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB

报告一个错误

低于PassMark测试中的延时，ns

23 33

左右 30% 更低的延时
更快的读取速度，GB/s

13.6 10.4

测试中的平均数值
更快的写入速度，GB/s

9.4 5.5

测试中的平均数值

Samsung M393A1G40DB0-B`B 8GB

需要考虑的原因
Samsung M393A1G40DB0-B`B 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT2G3D1608DT1TX0 2GB

Samsung M393A1G40DB0-B`B 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 33
读取速度，GB/s

13.6 10.4
写入速度，GB/s

9.4 5.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2096 1806

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Netac Technology Co Ltd EKBLUE4162417AD 8GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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Samsung M378A1K43BB1-CRC 8GB

Kingston 99U5471-030.A00LF 8GB

Kingston 99U5471-030.A00LF 8GB

SK Hynix HMA425S6BJR6N-UH 2GB

SK Hynix HMA425S6BJR6N-UH 2GB

Corsair CMZ16GX3M2A2400C10 8GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Kingston 99U5663-006.A00G 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

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G Skill Intl F4-2666C15-8GRR 8GB