A-DATA Technology AM2L16BC4R1-B0AS 4GB vs Micron Technology 16ATF2G64AZ-2G3B1 16GB

总分

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

总分

Micron Technology 16ATF2G64AZ-2G3B1 16GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

差异规格评论

差异

A-DATA Technology AM2L16BC4R1-B0AS 4GB

需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0AS 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 35

左右 23% 更低的延时

Micron Technology 16ATF2G64AZ-2G3B1 16GB

需要考虑的原因
Micron Technology 16ATF2G64AZ-2G3B1 16GB

报告一个错误

更快的读取速度，GB/s

15 13.4

测试中的平均数值
更快的写入速度，GB/s

10.4 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 35
读取速度，GB/s

13.4 15.0
写入速度，GB/s

7.8 10.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2181 2672

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4SFRA266.M16FR 16GB

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Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

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Corsair CMX4GX3M1A1333C9 4GB

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Kingston 9905734-061.A00G 32GB

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Kingston MSI32D4S2S1ME-8 8GB

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