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A-DATA Technology AM2L16BC4R1-B0AS 4GB
Samsung M378A5143EB1-CPB 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB vs Samsung M378A5143EB1-CPB 4GB

总分
star star star star star
A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

总分
star star star star star
Samsung M378A5143EB1-CPB 4GB

Samsung M378A5143EB1-CPB 4GB

差异 规格 评论

差异

A-DATA Technology AM2L16BC4R1-B0AS 4GB 需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0AS 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 38
    左右 29% 更低的延时
Samsung M378A5143EB1-CPB 4GB 需要考虑的原因
Samsung M378A5143EB1-CPB 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.6 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.8 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Samsung M378A5143EB1-CPB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 38
  • 读取速度，GB/s
    13.4 left arrow 14.6
  • 写入速度，GB/s
    7.8 left arrow 10.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2181 left arrow 2298

A-DATA Technology AM2L16BC4R1-B0AS 4GB RAM的比较

Kingston 99U5403-185.A00LF 8GB
Kingston 9905403-410.A00LF 4GB

Samsung M378A5143EB1-CPB 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Samsung M378A5143EB1-CPB 4GB
Samsung M378A5143EB1-CPB 4GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Kingston KHX3000C15D4/8GX 8GB
Kingston KHX3000C15D4/8GX 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Corsair CMK8GX4M2B3000C15 4GB
Corsair CMK8GX4M2B3000C15 4GB
内存RAM
Kingston KHX1866C10D3/8GX 8GB
Kingston KHX1866C10D3/8GX 8GB
Crucial Technology CT32G4SFD832A.C16FB 32GB
Crucial Technology CT32G4SFD832A.C16FB 32GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4DFS632A.M4FB 8GB
Crucial Technology CT8G4DFS632A.M4FB 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
内存RAM
Kingston 39P5429-006.AO01 2GB
Kingston 39P5429-006.AO01 2GB
Apacer Technology 78.C1GQB.4032B 8GB
Apacer Technology 78.C1GQB.4032B 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
G Skill Intl F4-4000C18-8GTZKK 8GB
G Skill Intl F4-4000C18-8GTZKK 8GB
内存RAM
Corsair CMSO4GX3M1C1600C11 4GB
Corsair CMSO4GX3M1C1600C11 4GB
G Skill Intl F4-3200C16-16GTRS 16GB
G Skill Intl F4-3200C16-16GTRS 16GB
内存RAM