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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
报告一个错误
低于PassMark测试中的延时,ns
21
24
左右 -14% 更低的延时
更快的读取速度,GB/s
18.5
16
测试中的平均数值
更快的写入速度,GB/s
14.0
12.5
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
21
读取速度,GB/s
16.0
18.5
写入速度,GB/s
12.5
14.0
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
3263
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB RAM的比较
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905403-061.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9965669-008.A03G 16GB
Samsung M471A1G44AB0-CWE 8GB
Roa Logic BV iGame DDR4 8G 3000 8GB
Kingston 9905471-001.A01LF 2GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Kingston KVR16N11/8-SP 8GB
Kingston 9905744-076.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Essencore Limited KD48GS481-26N1600 8GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology BLS8G4D240FSE.16FBD 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
A-DATA Technology DDR2 800G 2GB
Wilk Elektronik S.A. GY2133D464L15S/8G 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston 9965640-015.A00G 32GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C16-8GTZSK 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Apacer Technology GD2.1831WS.002 16GB
Kingston 99U5474-023.A00LF 4GB
Kingston 9905630-005.A00G 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
A-DATA Technology AO1P32MCST2-BW4S 16GB
报告一个错误
×
Bug description
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