A-DATA Technology AM2L16BC4R1-B0CS 4GB vs Corsair CMW16GX4M2K4266C19 8GB

总分

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

总分

Corsair CMW16GX4M2K4266C19 8GB

Corsair CMW16GX4M2K4266C19 8GB

差异规格评论

差异

A-DATA Technology AM2L16BC4R1-B0CS 4GB

需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0CS 4GB

报告一个错误

Corsair CMW16GX4M2K4266C19 8GB

需要考虑的原因
Corsair CMW16GX4M2K4266C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 26

左右 -13% 更低的延时
更快的读取速度，GB/s

19 9.8

测试中的平均数值
更快的写入速度，GB/s

16.5 4.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Corsair CMW16GX4M2K4266C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 23
读取速度，GB/s

9.8 19.0
写入速度，GB/s

4.6 16.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1560 3827

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Samsung M3 91T2953GZ3-CF7 1GB

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PNY Electronics PNY 2GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Kingston KHX3600C17D4/16GX 16GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Kingston XN205T-HYD2 16GB

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Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

G Skill Intl F4-3200C14-32GTZR 32GB

G Skill Intl F4-3200C14-32GTZR 32GB

Samsung M471B5273CH0-CH9 4GB

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Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

G Skill Intl F4-2133C15-16GFX 16GB

G Skill Intl F4-2133C15-16GFX 16GB