Samsung M471B5273CH0-CH9 4GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

需要考虑的原因
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 48

左右 -55% 更低的延时
更快的读取速度，GB/s

20.5 8.9

测试中的平均数值
更快的写入速度，GB/s

15.5 5.9

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 31
读取速度，GB/s

8.9 20.5
写入速度，GB/s

5.9 15.5
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1420 3649

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston KHX1600C9D3/4GX 4GB

Kingston KHX1600C9D3/4GX 4GB

Memphis Electronic D4SO1G724GI-A58SD 8GB

Memphis Electronic D4SO1G724GI-A58SD 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology 16G4UD2400.C16BD1 16GB

Crucial Technology 16G4UD2400.C16BD1 16GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

G Skill Intl F4-3200C16-8GTZSK 8GB

G Skill Intl F4-3200C16-8GTZSK 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Kingston 9965669-005.A01G 16GB

Kingston 9965669-005.A01G 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Corsair CMK16GX4M2C3200C16 8GB

Corsair CMK16GX4M2C3200C16 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Ramaxel Technology RMUA5110ME78HAF-2666 8GB

Ramaxel Technology RMUA5110ME78HAF-2666 8GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

JUHOR JHD2666U1916JG 16GB

JUHOR JHD2666U1916JG 16GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Samsung V-GeN D4S4GL30A16TS5 4GB

Samsung V-GeN D4S4GL30A16TS5 4GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Samsung M471A5143DB0-CPB 4GB

Samsung M471A5143DB0-CPB 4GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Crucial Technology BLS8G4D240FSCK.8FD 8GB

Crucial Technology BLS8G4D240FSCK.8FD 8GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Kingston XW21KG-HYD-NX 8GB

Kingston XW21KG-HYD-NX 8GB