A-DATA Technology AM2L16BC4R1-B0CS 4GB vs Crucial Technology BLS8G4D30BESBK.8FD 8GB

总分

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

总分

Crucial Technology BLS8G4D30BESBK.8FD 8GB

Crucial Technology BLS8G4D30BESBK.8FD 8GB

差异规格评论

差异

A-DATA Technology AM2L16BC4R1-B0CS 4GB

需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0CS 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 29

左右 10% 更低的延时

Crucial Technology BLS8G4D30BESBK.8FD 8GB

需要考虑的原因
Crucial Technology BLS8G4D30BESBK.8FD 8GB

报告一个错误

更快的读取速度，GB/s

17.9 9.8

测试中的平均数值
更快的写入速度，GB/s

13.4 4.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Crucial Technology BLS8G4D30BESBK.8FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 29
读取速度，GB/s

9.8 17.9
写入速度，GB/s

4.6 13.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1560 3311

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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最新比较

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Samsung M395T2863QZ4-CF76 1GB

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G Skill Intl F4-2666C15-8GRKB 8GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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Samsung M395T2863QZ4-CF76 1GB

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Micron Technology 18ASF1G72PZ-2G1A2 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Crucial Technology BL8G32C16U4WL.8FE 8GB

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Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Corsair CMK16GX4M2C3600C20 8GB

Corsair CMK16GX4M2C3600C20 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Smart Modular SF4642G8CK8IEHLSBG 16GB

Smart Modular SF4642G8CK8IEHLSBG 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

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Samsung M386A4G40DM1-CRC 32GB

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