A-DATA Technology AM2L16BC4R1-B0CS 4GB vs Kingston KHX3200C18D4/8G 8GB

总分

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

总分

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

差异规格评论

差异

A-DATA Technology AM2L16BC4R1-B0CS 4GB

需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0CS 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 28

左右 7% 更低的延时

Kingston KHX3200C18D4/8G 8GB

需要考虑的原因
Kingston KHX3200C18D4/8G 8GB

报告一个错误

更快的读取速度，GB/s

18.2 9.8

测试中的平均数值
更快的写入速度，GB/s

14.9 4.6

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Kingston KHX3200C18D4/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 28
读取速度，GB/s

9.8 18.2
写入速度，GB/s

4.6 14.9
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1560 3501

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology AM2U16BC4P2-B05B 4GB

Corsair CMK16GX4M2C3000C16 8GB

Corsair CMK16GX4M2C3000C16 8GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

AMD R744G2400U1S 4GB

AMD R744G2400U1S 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-3733C17-8GTZA 8GB

G Skill Intl F4-3733C17-8GTZA 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

G Skill Intl F4-3200C16-32GVK 32GB

G Skill Intl F4-3200C16-32GVK 32GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Kingston KTD3KX-HYA 8GB

Kingston KTD3KX-HYA 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

G Skill Intl F4-2666C18-32GTZN 32GB

G Skill Intl F4-2666C18-32GTZN 32GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology BLS8G4S240FSD.16FBD2 8GB

Crucial Technology BLS8G4S240FSD.16FBD2 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

G Skill Intl F4-3600C16-8GTZR 8GB

G Skill Intl F4-3600C16-8GTZR 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Patriot Memory (PDP Systems) PSD44G240081S 4GB

Patriot Memory (PDP Systems) PSD44G240081S 4GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

G Skill Intl F4-3600C16-8GTESC 8GB

G Skill Intl F4-3600C16-8GTESC 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Corsair CMD8GX4M2B3466C18 4GB

Corsair CMD8GX4M2B3466C18 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Kingston KHX2666C15S4/8G 8GB

Kingston KHX2666C15S4/8G 8GB

Samsung M391B1G73QH0-CMA 8GB

Samsung M391B1G73QH0-CMA 8GB

Crucial Technology CT8G4DFD824A.C16FE 8GB

Crucial Technology CT8G4DFD824A.C16FE 8GB