Samsung M3 78T5663EH3-CF7 2GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Samsung M3 78T5663EH3-CF7 2GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

总分

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

差异规格评论

差异

Samsung M3 78T5663EH3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 14.2

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 65

左右 -160% 更低的延时
更快的写入速度，GB/s

7.4 2,451.8

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663EH3-CF7 2GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 25
读取速度，GB/s

4,605.9 14.2
写入速度，GB/s

2,451.8 7.4
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

878 2104

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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