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A-DATA Technology AM2L16BC4R1-B0CS 4GB
Samsung M471A2G43AB2-CWE 16GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB vs Samsung M471A2G43AB2-CWE 16GB

总分
star star star star star
A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

总分
star star star star star
Samsung M471A2G43AB2-CWE 16GB

Samsung M471A2G43AB2-CWE 16GB

差异 规格 评论

差异

A-DATA Technology AM2L16BC4R1-B0CS 4GB 需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0CS 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 46
    左右 43% 更低的延时
Samsung M471A2G43AB2-CWE 16GB 需要考虑的原因
Samsung M471A2G43AB2-CWE 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.9 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 4.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Samsung M471A2G43AB2-CWE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 46
  • 读取速度，GB/s
    9.8 left arrow 15.9
  • 写入速度，GB/s
    4.6 left arrow 12.8
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1560 left arrow 2936

A-DATA Technology AM2L16BC4R1-B0CS 4GB RAM的比较

A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMU32GX4M4C3200C16 8GB

Samsung M471A2G43AB2-CWE 16GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB
Chun Well Technology Holding Limited CL16-20-20 D4-3000
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Samsung M471A2K43CB1-CTD 16GB
Samsung M471A2K43CB1-CTD 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Samsung M471A2G43AB2-CWE 16GB
Samsung M471A2G43AB2-CWE 16GB
内存RAM
Samsung M471B1G73EB0-YK0 8GB
Samsung M471B1G73EB0-YK0 8GB
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内存RAM
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Apacer Technology 78.01GA0.9K5 1GB
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G Skill Intl F4-3333C16-16GTZB 16GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
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内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Mushkin 99[2/7/4]205F 8GB
Mushkin 99[2/7/4]205F 8GB
内存RAM
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Samsung M3 78T3354BZ0-CCC 256MB
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Kingston 9905702-121.A00G 8GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
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Samsung M393A1G40DB0-B`B 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
内存RAM
Kingston HP669238-071-HYC 4GB
Kingston HP669238-071-HYC 4GB
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Samsung M378A1G44BB0-CWE 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
内存RAM
Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
G Skill Intl F4-3200C14-16GFX 16GB
G Skill Intl F4-3200C14-16GFX 16GB
内存RAM