A-DATA Technology AM2L16BC4R1-B0CS 4GB vs SK Hynix HMA451S6AFR8N-TF 4GB

总分

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

总分

SK Hynix HMA451S6AFR8N-TF 4GB

SK Hynix HMA451S6AFR8N-TF 4GB

差异规格评论

差异

A-DATA Technology AM2L16BC4R1-B0CS 4GB

需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0CS 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 37

左右 30% 更低的延时

SK Hynix HMA451S6AFR8N-TF 4GB

需要考虑的原因
SK Hynix HMA451S6AFR8N-TF 4GB

报告一个错误

更快的读取速度，GB/s

13.9 9.8

测试中的平均数值
更快的写入速度，GB/s

10.2 4.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2L16BC4R1-B0CS 4GB

SK Hynix HMA451S6AFR8N-TF 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 37
读取速度，GB/s

9.8 13.9
写入速度，GB/s

4.6 10.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1560 2191

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9965525-144.A00LF 8GB

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Golden Empire CL14-16-16 D4-3000 4GB

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Crucial Technology CT4G4DFS8266.C8FB 4GB

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A-DATA Technology DOVF1B163G2G 2GB

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G Skill Intl F4-3000C16-8GSXWB 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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SK Hynix HMA81GS6CJR8N-XN 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Kingston 99U5700-010.A00G 8GB

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Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

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Corsair CMW16GX4M2K4266C19 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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