A-DATA Technology AM2L16BC4R1-B0CS 4GB vs SK Hynix HMA851U6JJR6N-VK 4GB

总分

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

总分

SK Hynix HMA851U6JJR6N-VK 4GB

SK Hynix HMA851U6JJR6N-VK 4GB

差异规格评论

差异

A-DATA Technology AM2L16BC4R1-B0CS 4GB

需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0CS 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 31

左右 16% 更低的延时

SK Hynix HMA851U6JJR6N-VK 4GB

需要考虑的原因
SK Hynix HMA851U6JJR6N-VK 4GB

报告一个错误

更快的读取速度，GB/s

15.5 9.8

测试中的平均数值
更快的写入速度，GB/s

9.9 4.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2L16BC4R1-B0CS 4GB

SK Hynix HMA851U6JJR6N-VK 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 31
读取速度，GB/s

9.8 15.5
写入速度，GB/s

4.6 9.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1560 2060

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AE4S240038G17-BHYA 8GB

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Corsair CM4X16GD3200C16K2E 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB

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SK Hynix HMT351S6AFR8C-G7 4GB

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Samsung M393B2G70BH0-CK0 16GB

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Kingston 9905471-006.A00LF 4GB

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Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Smart Modular SF4641G8CKHIWDFSEG 8GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Corsair CM4X16GE2933C19S2 16MB

Corsair CM4X16GE2933C19S2 16MB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

G Skill Intl F4-3000C15-8GRK 8GB

G Skill Intl F4-3000C15-8GRK 8GB