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A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-4400C19-32GVK 32GB

A-DATA Technology AM2U16BC4P2-B05B 4GB vs G Skill Intl F4-4400C19-32GVK 32GB

总分
star star star star star
A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

总分
star star star star star
G Skill Intl F4-4400C19-32GVK 32GB

G Skill Intl F4-4400C19-32GVK 32GB

差异 规格 评论

差异

A-DATA Technology AM2U16BC4P2-B05B 4GB 需要考虑的原因
A-DATA Technology AM2U16BC4P2-B05B 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 33
    左右 21% 更低的延时
G Skill Intl F4-4400C19-32GVK 32GB 需要考虑的原因
G Skill Intl F4-4400C19-32GVK 32GB
报告一个错误
  • 更快的读取速度，GB/s
    21.1 left arrow 14
    测试中的平均数值
  • 更快的写入速度，GB/s
    18.8 left arrow 9.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-4400C19-32GVK 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 33
  • 读取速度，GB/s
    14.0 left arrow 21.1
  • 写入速度，GB/s
    9.1 left arrow 18.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, , CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2330 left arrow 3959

A-DATA Technology AM2U16BC4P2-B05B 4GB RAM的比较

Kingston EBJ81UG8BBW0-GN-F 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-4400C19-32GVK 32GB RAM的比较

Crucial Technology CT8G4SFS632A.C4FE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-4400C19-32GVK 32GB
G Skill Intl F4-4400C19-32GVK 32GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston 9905743-045.A00G 16GB
Kingston 9905743-045.A00G 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Kingston ACR26D4U9S1KA-4 4GB
Kingston ACR26D4U9S1KA-4 4GB
内存RAM
Nanya Technology NT4GC64C88B1NS-DI 4GB
Nanya Technology NT4GC64C88B1NS-DI 4GB
Kingston 9965600-018.A00G 16GB
Kingston 9965600-018.A00G 16GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Crucial Technology CT16G4DFD8213.C16FH1 16GB
Crucial Technology CT16G4DFD8213.C16FH1 16GB
内存RAM
Kingston 9905469-124.A00LF 4GB
Kingston 9905469-124.A00LF 4GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3466C18-8GSXW 8GB
G Skill Intl F4-3466C18-8GSXW 8GB
内存RAM
Strontium EVMT8G1600U86S 8GB
Strontium EVMT8G1600U86S 8GB
Transcend Information TS1GLH64V1H 8GB
Transcend Information TS1GLH64V1H 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2133C15-4GRB 4GB
G Skill Intl F4-2133C15-4GRB 4GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Kingston 99U5663-001.A00G 16GB
Kingston 99U5663-001.A00G 16GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Micron Technology 16G3200CL22 16GB
Micron Technology 16G3200CL22 16GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
SK Hynix HMA41GU6AFR8N-TF 8GB
SK Hynix HMA41GU6AFR8N-TF 8GB
内存RAM