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A-DATA Technology AM2U16BC4P2-B05B 4GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
比较
A-DATA Technology AM2U16BC4P2-B05B 4GB vs Micron Technology 8ATF1G64HZ-2G6D1 8GB
总分
A-DATA Technology AM2U16BC4P2-B05B 4GB
总分
Micron Technology 8ATF1G64HZ-2G6D1 8GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology AM2U16BC4P2-B05B 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
34
左右 24% 更低的延时
需要考虑的原因
Micron Technology 8ATF1G64HZ-2G6D1 8GB
报告一个错误
更快的读取速度,GB/s
15.8
14
测试中的平均数值
更快的写入速度,GB/s
12.4
9.1
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
A-DATA Technology AM2U16BC4P2-B05B 4GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
34
读取速度,GB/s
14.0
15.8
写入速度,GB/s
9.1
12.4
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2330
2830
A-DATA Technology AM2U16BC4P2-B05B 4GB RAM的比较
Kingston EBJ81UG8BBW0-GN-F 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology AM2U16BC4P2-B05B 4GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
Kingston HX318C10FK/4 4GB
G Skill Intl F4-3200C16-16GTRS 16GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-3333C16-8GVR 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston ACR21D4S15HAG/8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4DFD824A.C16FHD 16GB
V-Color Technology Inc. TD416G26D819-VC 16GB
Corsair CM5S16GM4800A40K2 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMWB8G1L3200K16W4 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMD16GX4M4B3333C16 4GB
A-DATA Technology DDR3 1866 8GB
A-DATA Technology DDR3 1600 4GB
Samsung M393B1G70BH0-CK0 8GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BL8G32C16U4R.8FE 8GB
Kingston 99U5474-010.A00LF 2GB
Kingston KF3200C20S4/8G 8GB
Peak Electronics 256X64M-67E 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
报告一个错误
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Bug description
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