A-DATA Technology DDR2 800G 2GB vs Corsair CMR32GX4M2C3200C16 16GB

总分

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

总分

Corsair CMR32GX4M2C3200C16 16GB

Corsair CMR32GX4M2C3200C16 16GB

差异规格评论

差异

A-DATA Technology DDR2 800G 2GB

需要考虑的原因
A-DATA Technology DDR2 800G 2GB

报告一个错误

更快的读取速度，GB/s

5 18.8

测试中的平均数值
更快的写入速度，GB/s

2,343.1 16.2

测试中的平均数值

Corsair CMR32GX4M2C3200C16 16GB

需要考虑的原因
Corsair CMR32GX4M2C3200C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 49

左右 -69% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR2 800G 2GB

Corsair CMR32GX4M2C3200C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 29
读取速度，GB/s

5,135.8 18.8
写入速度，GB/s

2,343.1 16.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

843 3808

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DDR2 800G 2GB

Corsair CMR32GX4M2C3200C16 16GB

Corsair CMR32GX4M2C3200C16 16GB

Samsung M393B1K70CH0-CH9 8GB

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G Skill Intl F4-2800C16-4GRR 4GB

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Samsung 1600 CL10 Series 8GB

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Crucial Technology BL8G26C16U4W.8FD 8GB

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Kingston KVR800D2N6/2G 2GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

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Crucial Technology BLS16G4D240FSB.16FBD 16GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Kingston KHX2666C16S4/16G 16GB

Kingston KHX2666C16S4/16G 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston MSI24D4S7D8MB-8 8GB

Kingston MSI24D4S7D8MB-8 8GB

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

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SK Hynix HMAA4GU6MJR8N-VK 32GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB