A-DATA Technology DDR2 800G 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

A-DATA Technology DDR2 800G 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

总分

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

差异规格评论

差异

A-DATA Technology DDR2 800G 2GB

需要考虑的原因
A-DATA Technology DDR2 800G 2GB

报告一个错误

低于PassMark测试中的延时，ns

49 60

左右 18% 更低的延时

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

报告一个错误

更快的读取速度，GB/s

7.8 5

测试中的平均数值
更快的写入速度，GB/s

2.8 2,343.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR2 800G 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 60
读取速度，GB/s

5,135.8 7.8
写入速度，GB/s

2,343.1 2.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

843 1505

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DDR2 800G 2GB

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Kingston 9905598-039.A00G 16GB

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Samsung M393B5270CH0-CH9 4GB

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Corsair CMSO16GX4M1A2133C15 16GB

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Kingston ACR26D4S9S8KA-8 8GB

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Samsung M471B5173QH0-YK0 4GB

Crucial Technology CT8G4DFS824A.C8FDD1 8GB

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Samsung M393B5170FH0-CK0 4GB

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Kingston 9905678-007.A00G 8GB