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A-DATA Technology DDR2 800G 2GB
Transcend Information TS2GSH64V4B 16GB

A-DATA Technology DDR2 800G 2GB vs Transcend Information TS2GSH64V4B 16GB

总分
star star star star star
A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

总分
star star star star star
Transcend Information TS2GSH64V4B 16GB

Transcend Information TS2GSH64V4B 16GB

差异 规格 评论

差异

A-DATA Technology DDR2 800G 2GB 需要考虑的原因
A-DATA Technology DDR2 800G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 15.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,343.1 left arrow 11.4
    测试中的平均数值
Transcend Information TS2GSH64V4B 16GB 需要考虑的原因
Transcend Information TS2GSH64V4B 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 49
    左右 -96% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DDR2 800G 2GB
Transcend Information TS2GSH64V4B 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 25
  • 读取速度，GB/s
    5,135.8 left arrow 15.3
  • 写入速度，GB/s
    2,343.1 left arrow 11.4
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    843 left arrow 2681

A-DATA Technology DDR2 800G 2GB RAM的比较

Corsair CMK16GX4M2B3200C16 8GB
G Skill Intl F4-4266C19-32GTZR 32GB

Transcend Information TS2GSH64V4B 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) PSD48G240081 8GB
Patriot Memory (PDP Systems) PSD48G240081 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
SK Hynix HMA82GS6CJR8N-V-V 16GB
SK Hynix HMA82GS6CJR8N-V-V 16GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Samsung V-GeN D4S4GL32A8TL 4GB
Samsung V-GeN D4S4GL32A8TL 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Colorful Technology Ltd BAPC08G2666D4S8 8GB
Colorful Technology Ltd BAPC08G2666D4S8 8GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Corsair CMK32GX4M4A2400C12 8GB
Corsair CMK32GX4M4A2400C12 8GB
内存RAM
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston 99P5723-006.A00G 8GB
Kingston 99P5723-006.A00G 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT16G4DFD8213.C16FBD 16GB
Crucial Technology CT16G4DFD8213.C16FBD 16GB
内存RAM
Corsair CMSX32GX4M2A3200C22 16GB
Corsair CMSX32GX4M2A3200C22 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMT64GX4M2C3600C18 32GB
Corsair CMT64GX4M2C3600C18 32GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Ramaxel Technology RMUA5110MB78HAF2400 8GB
Ramaxel Technology RMUA5110MB78HAF2400 8GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Wilk Elektronik S.A. GR2133S464L15/16G 16GB
Wilk Elektronik S.A. GR2133S464L15/16G 16GB
内存RAM