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A-DATA Technology DDR3 1333+ 2GB
A-DATA Technology DDR4 2666 2OZ 4GB

A-DATA Technology DDR3 1333+ 2GB vs A-DATA Technology DDR4 2666 2OZ 4GB

总分
star star star star star
A-DATA Technology DDR3 1333+ 2GB

A-DATA Technology DDR3 1333+ 2GB

总分
star star star star star
A-DATA Technology DDR4 2666 2OZ 4GB

A-DATA Technology DDR4 2666 2OZ 4GB

差异 规格 评论

差异

A-DATA Technology DDR3 1333+ 2GB 需要考虑的原因
A-DATA Technology DDR3 1333+ 2GB
报告一个错误
A-DATA Technology DDR4 2666 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR4 2666 2OZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 71
    左右 -137% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 5.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DDR3 1333+ 2GB
A-DATA Technology DDR4 2666 2OZ 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    71 left arrow 30
  • 读取速度，GB/s
    6.8 left arrow 16.7
  • 写入速度，GB/s
    5.3 left arrow 12.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1275 left arrow 3106

A-DATA Technology DDR3 1333+ 2GB RAM的比较

G Skill Intl F4-3200C16-4GTZB 4GB

A-DATA Technology DDR4 2666 2OZ 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology DDR3 1333+ 2GB
A-DATA Technology DDR3 1333+ 2GB
A-DATA Technology DDR4 2666 2OZ 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Mushkin MR[ABC]4U360JNNM16G 16GB
Mushkin MR[ABC]4U360JNNM16G 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3000C16-8GISB 8GB
G Skill Intl F4-3000C16-8GISB 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Kingston 8ATF1G64AZ-2G3A1 8GB
Kingston 8ATF1G64AZ-2G3A1 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3000C15-8GRR 8GB
G Skill Intl F4-3000C15-8GRR 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3600C17-4GVK 4GB
G Skill Intl F4-3600C17-4GVK 4GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 9965745-002.A00G 16GB
Kingston 9965745-002.A00G 16GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Samsung V-GeN D4S8GL30A8TX5 8GB
Samsung V-GeN D4S8GL30A8TX5 8GB
内存RAM
Kingston 9905701-132.A00G 16GB
Kingston 9905701-132.A00G 16GB
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
内存RAM
Kingston 99U5403-465.A00LF 8GB
Kingston 99U5403-465.A00LF 8GB
King Tiger Technology Tigo-2133Mhz-8G 8GB
King Tiger Technology Tigo-2133Mhz-8G 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
内存RAM