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A-DATA Technology DDR3 1333G 2GB
Crucial Technology BLS4G4D240FSC.8FBD 4GB

A-DATA Technology DDR3 1333G 2GB vs Crucial Technology BLS4G4D240FSC.8FBD 4GB

总分
star star star star star
A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

总分
star star star star star
Crucial Technology BLS4G4D240FSC.8FBD 4GB

Crucial Technology BLS4G4D240FSC.8FBD 4GB

差异 规格 评论

差异

A-DATA Technology DDR3 1333G 2GB 需要考虑的原因
A-DATA Technology DDR3 1333G 2GB
报告一个错误
Crucial Technology BLS4G4D240FSC.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSC.8FBD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 40
    左右 -29% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.7 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DDR3 1333G 2GB
Crucial Technology BLS4G4D240FSC.8FBD 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 31
  • 读取速度，GB/s
    13.6 left arrow 17.4
  • 写入速度，GB/s
    7.8 left arrow 12.7
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2097 left arrow 2994

A-DATA Technology DDR3 1333G 2GB RAM的比较

Golden Empire CL5-5-5DDR2 1GB
A-DATA Technology DDR4 3200 2OZ 4GB

Crucial Technology BLS4G4D240FSC.8FBD 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-050.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Crucial Technology BLS4G4D240FSC.8FBD 4GB
Crucial Technology BLS4G4D240FSC.8FBD 4GB
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SK Hynix HYMP112U64CP8-S5 1GB
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内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
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内存RAM
Samsung M393B2G70BH0-CK0 16GB
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Samsung M378B5173BH0-CH9 4GB
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内存RAM
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Kingston 99U5471-012.A00LF 4GB
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内存RAM
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Samsung M378A1K43EB2-CWE 8GB
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Micron Technology 18ASF1G72PZ-2G3B1 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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内存RAM
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内存RAM
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内存RAM
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Gloway International (HK) STK4U2400D15082C 8GB
内存RAM