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Samsung M471B5673FH0-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

Samsung M471B5673FH0-CF8 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

差异 规格 评论

差异

Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 45
    左右 33% 更低的延时
  • 更快的读取速度，GB/s
    10.6 left arrow 6.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    6.8 left arrow 6.3
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 45
  • 读取速度，GB/s
    10.6 left arrow 6.9
  • 写入速度，GB/s
    6.8 left arrow 6.3
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-17000, 1.2V, TBD2 V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1479 left arrow 1499

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB RAM的比较

A-DATA Technology AM2L16BC4R1-B0AS 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Kingston 9905700-017.A00G 8GB
Kingston 9905700-017.A00G 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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G Skill Intl F4-3200C14-16GTZR 16GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
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Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
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G Skill Intl F2-8500CL5-2GBPI 2GB
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Avant Technology W642GU42J9266N8 16GB
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Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
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Corsair CM4X16GE2666C16K4 16GB
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A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
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Micron Technology 9ASF51272PZ-2G1A2 4GB
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AMD R538G1601U2S 8GB
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Apacer Technology 78.CAGQ7.ARC0B 8GB
内存RAM
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Samsung M471B5173EB0-YK0 4GB
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Transcend Information TS1GSH64V1H 8GB
内存RAM
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Kingston 9905403-134.A00LF 2GB
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G Skill Intl F4-4000C19-16GTRG 16GB
内存RAM
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Kingston 2GB-DDR2 800Mhz 2GB
G Skill Intl F4-3466C16-16GTZ 16GB
G Skill Intl F4-3466C16-16GTZ 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
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G Skill Intl F4-3333C16-8GTZSK 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
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AMD R748G2400U2S 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-2400C15-8GIS 8GB
G Skill Intl F4-2400C15-8GIS 8GB
内存RAM