SK Hynix HYMP164U64CP6-Y5 512MB vs Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

总分

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

总分

Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

差异规格评论

差异

SK Hynix HYMP164U64CP6-Y5 512MB

需要考虑的原因
SK Hynix HYMP164U64CP6-Y5 512MB

报告一个错误

更快的写入速度，GB/s

8,883.4 14.1

测试中的平均数值

Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

需要考虑的原因
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 44

左右 -22% 更低的延时
更快的读取速度，GB/s

15.9 14

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP164U64CP6-Y5 512MB

Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

44 36
读取速度，GB/s

14,740.4 15.9
写入速度，GB/s

8,883.4 14.1
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2811 3121

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

SK Hynix HMA851S6AFR6N-UH 4GB

SK Hynix HMA851S6AFR6N-UH 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Samsung M471A2G43AB2-CWE 16GB

Samsung M471A2G43AB2-CWE 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Team Group Inc. Team-Elite-2400 4GB

Team Group Inc. Team-Elite-2400 4GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

SK Hynix HMA81GS6CJR8N-UH 8GB

SK Hynix HMA81GS6CJR8N-UH 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

A-DATA Technology DDR4 3200 2OZ 4GB

A-DATA Technology DDR4 3200 2OZ 4GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

A-DATA Technology AD4S320038G22-B 8GB

A-DATA Technology AD4S320038G22-B 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

G Skill Intl F4-3000C16-8GTRS 8GB

G Skill Intl F4-3000C16-8GTRS 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingston ACR26D4S9S8HJ-8 8GB

Kingston ACR26D4S9S8HJ-8 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8G

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Apacer Technology 78.C1GMM.DFW0C 8GB

Apacer Technology 78.C1GMM.DFW0C 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology CT32G4DFD8266.M16FB 32GB

Crucial Technology CT32G4DFD8266.M16FB 32GB