Samsung M378B5773DH0-CH9 2GB vs Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

39 59

左右 34% 更低的延时

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

需要考虑的原因
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

报告一个错误

更快的读取速度，GB/s

17.2 11.7

测试中的平均数值
更快的写入速度，GB/s

9.7 7.2

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 59
读取速度，GB/s

11.7 17.2
写入速度，GB/s

7.2 9.7
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1749 2181

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMSX32GX4M2A2933C19 16GB

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