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A-DATA Technology DDR3 1600 4GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
比较
A-DATA Technology DDR3 1600 4GB vs Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
总分
A-DATA Technology DDR3 1600 4GB
总分
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology DDR3 1600 4GB
报告一个错误
需要考虑的原因
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
41
左右 -52% 更低的延时
更快的读取速度,GB/s
19.1
14
测试中的平均数值
更快的写入速度,GB/s
16.2
8.5
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
A-DATA Technology DDR3 1600 4GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
41
27
读取速度,GB/s
14.0
19.1
写入速度,GB/s
8.5
16.2
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2324
3784
A-DATA Technology DDR3 1600 4GB RAM的比较
A-DATA Technology DDR4 2666 2OZ 4GB
Kingston 9905624-004.A00G 4GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB RAM的比较
G Skill Intl F5-6000J3636F16G 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4SFD8213.C16FDD2 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
A-DATA Technology DDR3 1600 4GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CMK64GX4M4C3000C16 16GB
Kingston 9905471-006.A00LF 4GB
Samsung M393A1G40DB0-B`B 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Samsung M393A2G40DBD-CP1???? 16GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Corsair CMK16GX4M4B3733C17 4GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston MSI24D4S7S7MH-16 16GB
Kingston 99U5474-037.A00LF 4GB
G Skill Intl F4-3600C19-8GSXWB 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-3600C19-8GSXK 8GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-4000C16-16GTZRA 16GB
Corsair CMD16GX3M2A1866C9 8GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
SK Hynix HMT351S6CFR8C-PB 4GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB
Transcend Information AQD-D4U4GN21-SG 4GB
报告一个错误
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Bug description
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