A-DATA Technology DDR3 1600 4GB vs Chun Well Technology Holding Limited MD4U1632160DCW 16GB

总分

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

总分

Chun Well Technology Holding Limited MD4U1632160DCW 16GB

Chun Well Technology Holding Limited MD4U1632160DCW 16GB

差异规格评论

差异

A-DATA Technology DDR3 1600 4GB

需要考虑的原因
A-DATA Technology DDR3 1600 4GB

报告一个错误

Chun Well Technology Holding Limited MD4U1632160DCW 16GB

需要考虑的原因
Chun Well Technology Holding Limited MD4U1632160DCW 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 41

左右 -28% 更低的延时
更快的读取速度，GB/s

16.8 14

测试中的平均数值
更快的写入速度，GB/s

15.4 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR3 1600 4GB

Chun Well Technology Holding Limited MD4U1632160DCW 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 32
读取速度，GB/s

14.0 16.8
写入速度，GB/s

8.5 15.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2324 3579

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3866C18-8GTZR 8GB

G Skill Intl F4-3866C18-8GTZR 8GB

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A-DATA Technology DQVE1908 512MB

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G Skill Intl F4-3000C15-8GTZR 8GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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Transcend Information JM2666HSB-8G 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

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Panram International Corporation PUD42133C158G2VS 8GB

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Kingston 9905403-447.A00LF 4GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Avant Technology W642GU42J5213N 16GB