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A-DATA Technology DDR3 1600 4GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB

A-DATA Technology DDR3 1600 4GB vs Micron Technology 18ASF2G72PDZ-2G3B1 16GB

总分
star star star star star
A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

总分
star star star star star
Micron Technology 18ASF2G72PDZ-2G3B1 16GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

差异 规格 评论

差异

A-DATA Technology DDR3 1600 4GB 需要考虑的原因
A-DATA Technology DDR3 1600 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 57
    左右 28% 更低的延时
  • 更快的读取速度，GB/s
    14 left arrow 9.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.5 left arrow 7.4
    测试中的平均数值
Micron Technology 18ASF2G72PDZ-2G3B1 16GB 需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DDR3 1600 4GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 57
  • 读取速度，GB/s
    14.0 left arrow 9.5
  • 写入速度，GB/s
    8.5 left arrow 7.4
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2324 left arrow 2213

A-DATA Technology DDR3 1600 4GB RAM的比较

A-DATA Technology DDR4 2666 2OZ 4GB
Kingston 9905624-004.A00G 4GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-4000C18-16GVK 16GB
G Skill Intl F4-4000C18-16GVK 16GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Corsair CMN32GX4M2Z3600C18 16GB
Corsair CMN32GX4M2Z3600C18 16GB
内存RAM
Samsung M471A5143SB1-CRC 4GB
Samsung M471A5143SB1-CRC 4GB
Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
内存RAM
SK Hynix HMT125U6BFR8C-H9 2GB
SK Hynix HMT125U6BFR8C-H9 2GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
SK Hynix HMA81GR7AFR8N-VK 8GB
SK Hynix HMA81GR7AFR8N-VK 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
内存RAM
Corsair CMSO4GX3M1C1600C11 4GB
Corsair CMSO4GX3M1C1600C11 4GB
SK Hynix HMA82GS6AFR8N-UH 16GB
SK Hynix HMA82GS6AFR8N-UH 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston 9965600-027.A01G 16GB
Kingston 9965600-027.A01G 16GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology BLS8G4D26BFSB.16FD2 8GB
Crucial Technology BLS8G4D26BFSB.16FD2 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
A-DATA Technology AO2P24HC8T1-BTBS 8GB
A-DATA Technology AO2P24HC8T1-BTBS 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMK16GX4M2B3333C16 8GB
Corsair CMK16GX4M2B3333C16 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
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Kingston 99U5624-001.A00G 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-2666C18-32GTZN 32GB
G Skill Intl F4-2666C18-32GTZN 32GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Corsair CM4X16GC3200C16K4 16GB
Corsair CM4X16GC3200C16K4 16GB
内存RAM