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A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR4 2666 2OZ 4GB

A-DATA Technology DDR3L 1333G 4GB vs A-DATA Technology DDR4 2666 2OZ 4GB

总分
star star star star star
A-DATA Technology DDR3L 1333G 4GB

A-DATA Technology DDR3L 1333G 4GB

总分
star star star star star
A-DATA Technology DDR4 2666 2OZ 4GB

A-DATA Technology DDR4 2666 2OZ 4GB

差异 规格 评论

差异

A-DATA Technology DDR3L 1333G 4GB 需要考虑的原因
A-DATA Technology DDR3L 1333G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 30
    左右 13% 更低的延时
A-DATA Technology DDR4 2666 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR4 2666 2OZ 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.7 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 30
  • 读取速度，GB/s
    12.3 left arrow 16.7
  • 写入速度，GB/s
    8.3 left arrow 12.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2241 left arrow 3106

A-DATA Technology DDR3L 1333G 4GB RAM的比较

Samsung DDR3 8GB 1600MHz 8GB

A-DATA Technology DDR4 2666 2OZ 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
SK Hynix HMA41GU6AFR8N-TF 8GB
SK Hynix HMA41GU6AFR8N-TF 8GB
内存RAM
A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
G Skill Intl F4-2133C15-4GIS 4GB
G Skill Intl F4-2133C15-4GIS 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M391A1G43DB0-CPB 8GB
Samsung M391A1G43DB0-CPB 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Ramaxel Technology RMUA5110ME78HAF-2666 8GB
Ramaxel Technology RMUA5110ME78HAF-2666 8GB
内存RAM
Kingston KHYXPX-HYJ 8GB
Kingston KHYXPX-HYJ 8GB
Hewlett-Packard 7EH64AA#ABC 8GB
Hewlett-Packard 7EH64AA#ABC 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
ADVAN Inc AM42E28UD04T-NVL 4GB
ADVAN Inc AM42E28UD04T-NVL 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
内存RAM
Kingston 99U5403-492.A00LF 8GB
Kingston 99U5403-492.A00LF 8GB
Transcend Information AQD-D4U4GN21-SG 4GB
Transcend Information AQD-D4U4GN21-SG 4GB
内存RAM