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A-DATA Technology DOVF1B163G2G 2GB
Kingston KCDT82-MIE 4GB

A-DATA Technology DOVF1B163G2G 2GB vs Kingston KCDT82-MIE 4GB

总分
star star star star star
A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分
star star star star star
Kingston KCDT82-MIE 4GB

Kingston KCDT82-MIE 4GB

差异 规格 评论

差异

A-DATA Technology DOVF1B163G2G 2GB 需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17
    测试中的平均数值
Kingston KCDT82-MIE 4GB 需要考虑的原因
Kingston KCDT82-MIE 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 56
    左右 -47% 更低的延时
  • 更快的写入速度，GB/s
    12.5 left arrow 1,925.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DOVF1B163G2G 2GB
Kingston KCDT82-MIE 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 38
  • 读取速度，GB/s
    4,315.2 left arrow 17.0
  • 写入速度，GB/s
    1,925.7 left arrow 12.5
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    658 left arrow 2302

A-DATA Technology DOVF1B163G2G 2GB RAM的比较

ProMos/Mosel Vitelic V916764K24QAFW-F5 512MB
Kingston DNU540DR4NABND1 2GB

Kingston KCDT82-MIE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
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内存RAM