A-DATA Technology DOVF1B163G2G 2GB vs Samsung M386A4G40DM0-CPB 32GB

总分

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分

Samsung M386A4G40DM0-CPB 32GB

Samsung M386A4G40DM0-CPB 32GB

差异规格评论

差异

A-DATA Technology DOVF1B163G2G 2GB

需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB

报告一个错误

Samsung M386A4G40DM0-CPB 32GB

需要考虑的原因
Samsung M386A4G40DM0-CPB 32GB

报告一个错误

低于PassMark测试中的延时，ns

55 56

左右 -2% 更低的延时
更快的读取速度，GB/s

9.4 4

测试中的平均数值
更快的写入速度，GB/s

7.2 1,925.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DOVF1B163G2G 2GB

Samsung M386A4G40DM0-CPB 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 55
读取速度，GB/s

4,315.2 9.4
写入速度，GB/s

1,925.7 7.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

658 2117

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M386A4G40DM0-CPB 32GB

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Asgard VMA45UG-MEC1U2AW1 8GB

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Teikon TMA81GS6AFR8N-UHSC 8GB

Teikon TMA81GS6AFR8N-UHSC 8GB

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SK Hynix HMT41GS6BFR8A-PB 8GB

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Crucial Technology CT4G4DFS824A.M8FE 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

Essencore Limited KD48GU880-26N160T 8GB

Essencore Limited KD48GU880-26N160T 8GB

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G Skill Intl F5-6400J3239G16G 16GB

Samsung M378A2K43DB1-CTD 16GB

Samsung M378A2K43DB1-CTD 16GB