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A-DATA Technology DQKD1A08 1GB
Corsair CMD32GX4M2C3200C14T 16GB

A-DATA Technology DQKD1A08 1GB vs Corsair CMD32GX4M2C3200C14T 16GB

总分
star star star star star
A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分
star star star star star
Corsair CMD32GX4M2C3200C14T 16GB

Corsair CMD32GX4M2C3200C14T 16GB

差异 规格 评论

差异

A-DATA Technology DQKD1A08 1GB 需要考虑的原因
A-DATA Technology DQKD1A08 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 18.4
    测试中的平均数值
Corsair CMD32GX4M2C3200C14T 16GB 需要考虑的原因
Corsair CMD32GX4M2C3200C14T 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 52
    左右 -160% 更低的延时
  • 更快的写入速度，GB/s
    13.9 left arrow 1,145.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 4200
    左右 4.05 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQKD1A08 1GB
Corsair CMD32GX4M2C3200C14T 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 20
  • 读取速度，GB/s
    2,614.5 left arrow 18.4
  • 写入速度，GB/s
    1,145.9 left arrow 13.9
  • 内存带宽，mbps
    4200 left arrow 17000
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    409 left arrow 3426

A-DATA Technology DQKD1A08 1GB RAM的比较

SK Hynix HYMP125U64CP8-S6 2GB
Samsung M4 70T2864AZ3-CE6 1GB

Corsair CMD32GX4M2C3200C14T 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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Kingston 9905469-143.A00LF 4GB
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Micron Technology 8ATF2G64HZ-3G2E2 16GB
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内存RAM
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Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
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Samsung M471B5273DH0-CH9 4GB
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Chun Well Technology Holding Limited ND4U1636181DRLDE 1
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