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A-DATA Technology DQKD1A08 1GB
Corsair CMR16GX4M2D3200C16 8GB

A-DATA Technology DQKD1A08 1GB vs Corsair CMR16GX4M2D3200C16 8GB

总分
star star star star star
A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分
star star star star star
Corsair CMR16GX4M2D3200C16 8GB

Corsair CMR16GX4M2D3200C16 8GB

差异 规格 评论

差异

A-DATA Technology DQKD1A08 1GB 需要考虑的原因
A-DATA Technology DQKD1A08 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 18.9
    测试中的平均数值
Corsair CMR16GX4M2D3200C16 8GB 需要考虑的原因
Corsair CMR16GX4M2D3200C16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 52
    左右 -100% 更低的延时
  • 更快的写入速度，GB/s
    14.0 left arrow 1,145.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 4200
    左右 4.05 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQKD1A08 1GB
Corsair CMR16GX4M2D3200C16 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 26
  • 读取速度，GB/s
    2,614.5 left arrow 18.9
  • 写入速度，GB/s
    1,145.9 left arrow 14.0
  • 内存带宽，mbps
    4200 left arrow 17000
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    409 left arrow 3456

A-DATA Technology DQKD1A08 1GB RAM的比较

SK Hynix HYMP125U64CP8-S6 2GB
Samsung M4 70T2864AZ3-CE6 1GB

Corsair CMR16GX4M2D3200C16 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
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Corsair CMR16GX4M2D3200C16 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
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内存RAM
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内存RAM
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Kingston 9965525-140.A00LF 8GB
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内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMW16GX4M1Z3200C16 16GB
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内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
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内存RAM
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内存RAM
A-DATA Technology VDQVE1B16 2GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM