A-DATA Technology DQKD1A08 1GB vs Samsung M378A1K43BB1-CPB 8GB

总分

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分

Samsung M378A1K43BB1-CPB 8GB

Samsung M378A1K43BB1-CPB 8GB

差异规格评论

差异

A-DATA Technology DQKD1A08 1GB

需要考虑的原因
A-DATA Technology DQKD1A08 1GB

报告一个错误

更快的读取速度，GB/s

2 14.9

测试中的平均数值

Samsung M378A1K43BB1-CPB 8GB

需要考虑的原因
Samsung M378A1K43BB1-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 52

左右 -49% 更低的延时
更快的写入速度，GB/s

10.1 1,145.9

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQKD1A08 1GB

Samsung M378A1K43BB1-CPB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 35
读取速度，GB/s

2,614.5 14.9
写入速度，GB/s

1,145.9 10.1
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

409 2613

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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AMD R534G1601U1S-UO 4GB

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G Skill Intl F4-3200C14-8GFX 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-3200C16-16GTZKO 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Corsair CMD64GX4M8A2666C15 8GB

Corsair CMD64GX4M8A2666C15 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB